Study of Thin Barrier GaN Biosensor with Improved Sensitivity
نویسندگان
چکیده
Abstract The sensitivity of GaN biosensor device is directly related to transconductance (g m ) the HEMT device. In this paper, by applying with AlGaN/GaN material thin AlGaN barrier and appropriately Al composition, maximum m,max shifted near zero gate voltage spontaneously. can be improved without reference electrode. 0.35 mA/pH in pH detection 1pg/ml protein achieved.
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ژورنال
عنوان ژورنال: Journal of physics
سال: 2023
ISSN: ['0022-3700', '1747-3721', '0368-3508', '1747-3713']
DOI: https://doi.org/10.1088/1742-6596/2500/1/012001